Conquering LER with computational metrology: A conversation with Chris Mack of Fractilia
Line Edge Roughness, or LER, increasingly became a problem in semiconductor lithography as critical dimensions dropped below 28nm, blew past 14nm, and are no...
About this video
Line Edge Roughness, or LER, increasingly became a problem in semiconductor lithography as critical dimensions dropped below 28nm, blew past 14nm, and are now headed below 10nm. The problem is greater than process control because LER is still difficult to measure with CD SEMs because of white noise from the SEM itself. Full Video Visit: https://www.wesrch.com/electronics/weqEL19PWB
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Aug 17, 2017
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