Conquering LER with computational metrology: A conversation with Chris Mack of Fractilia

Line Edge Roughness, or LER, increasingly became a problem in semiconductor lithography as critical dimensions dropped below 28nm, blew past 14nm, and are no...

Sophie Wesrch21 views2:40

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Line Edge Roughness, or LER, increasingly became a problem in semiconductor lithography as critical dimensions dropped below 28nm, blew past 14nm, and are now headed below 10nm. The problem is greater than process control because LER is still difficult to measure with CD SEMs because of white noise from the SEM itself. Full Video Visit: https://www.wesrch.com/electronics/weqEL19PWB

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21

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2:40

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Published
Aug 17, 2017

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